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Optocoupler device MSKSEMI PC817C-MS featuring GaAs infrared diode and NPN phototransistor for signal switching applications

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Optocoupler device MSKSEMI PC817C-MS featuring GaAs infrared diode and NPN phototransistor for signal switching applications

Rise time : 6us

Fall time : 5us

Output Current : 150nA

Vce Saturation(VCE(sat)) : 200mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 35V

Reverse Voltage : 6V

Current transfer ratio : 200%;400%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : Phototransistor Output 5kVrms 1 Channel SOP-4

Mfr. Part # : PC817C-MS

Model Number : PC817C-MS

Package : SOP-4

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Product Overview

The PC817x-MS series is a family of high-reliability optocouplers designed for various industrial applications. Featuring a GaAs infrared emitting diode coupled with an NPN silicon phototransistor, these devices offer excellent isolation voltage (5,000Vrms) and fast response times (typ. 6s rise, 5s fall). They are suitable for signal transmission, switching power supplies, electric meters, computers, measurement equipment, storage devices, copiers, vending machines, and home appliances.

Product Attributes

  • Brand: Msksemi
  • Series: PC817x-MS
  • Construction: GaAs infrared emitting diode and NPN silicon phototransistor
  • Pin Center Spacing: 2.54mm

Technical Specifications

Parameter Symbol Condition Min. Typical Max. Unit
Maximum Absolute Ratings (Ta=25)
Forward Current IF 50 mA
Reverse Voltage VR 6 V
Consume Power (Input) P 70 mW
Collector and emitter Voltage VCEO 35 V
Emitter and collector Voltage VECO 6
Collector Current IC 50 mA
Consume Power (Output) PC 150 mW
Total Consume Power Ptot 200 mW
Insulation Voltage Viso AC Test, 1 minute, humidity 40~60% 5,000 Vrms
Max Insulation Voltage VIOTM 6,000 V
Rated Impulse Insulation Voltage VIORM 630 V
Working Temperature Topr -55 110
Storage Temperature Tstg -55 125
Soldering Temperature Tsol Soldering time 10 seconds 260
Optoelectronic Characteristics (Ta=25)
Forward Voltage VF IF=20mA 1.40 V
Reverse Current IR VR=5V 5 uA
Collector capacitance Ct V=0, f=1MHz 30 250 pF
Collector to emitter Current ICEO VCE=70V, IF=0mA 150 n A
Collector and Emitter attenuation Voltage BVCEO IC=0.1mA, IF=0mA 70 V
Emitter and Collector attenuation Voltage BVECO IE=10A, IF=0mA 6 V
Transfer Characteristics
Current conversion ratio CTR IF=5mA, VCE=5V 50 600 %
Collector and Emitter Saturation Voltage VCE(sat) IF=20mA, IC=1mA 0.1 0.2 V
Insulation Impedance Riso DC500V, 40~60%R.H. 51010 11011
Capacitance Cf V=0, f=1MHz 0.6 1 pF
Transforming Frequency fc VCE=5V, IC=2mA, RL=100, -3dB 80 kHz
Rise time tr VCE=2V, IC=2mA, RL=100 6 18 s
Descend Time tf VCE=2V, IC=2mA, RL=100 5 18 s
Current Conversion Ratio Grades
Grade Sign Min (%) Max (%)
A 100 160
B 130 260
C 200 400
D 300 600
A or B or C or D 50 600
Package Dimensions
Package Type Unit: mm (inch)
DIP-4
SOP-4
Product Ordering Information
Product Name Package Packing Minimum Package Package Quantity
PC817X-MS DIP-4 Tube 100PCS/Tube 1000PCS/Box
PC817X-MS SOP-4 Reel 2000PCS/Reel 10000PCS/Box

2401210730_MSKSEMI-PC817C-MS_C7472816.pdf


Quality Optocoupler device MSKSEMI PC817C-MS featuring GaAs infrared diode and NPN phototransistor for signal switching applications for sale

Optocoupler device MSKSEMI PC817C-MS featuring GaAs infrared diode and NPN phototransistor for signal switching applications Images

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