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High isolation voltage optocoupler MSKSEMI MEL357B designed for compact electronic devices and industrial control

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High isolation voltage optocoupler MSKSEMI MEL357B designed for compact electronic devices and industrial control

Fall time : 3us

Output Current : 50mA

Rise time : 4us

Vce Saturation(VCE(sat)) : 100mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 9V

Current transfer ratio : 80%;160%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : -

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 3.75kV

Description : Phototransistor Output 3.75kVrms SOP-4

Mfr. Part # : MEL357B

Model Number : MEL357B

Package : SOP-4

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Product Overview

The MEL357X is a compact surface-mount optocoupler designed for high-density applications. It comprises a gallium arsenide light-emitting diode and a phototransistor, offering superior miniaturization compared to DIP packages. Ideal for programmable controllers and various electronic devices, it provides excellent current transfer ratio (CTR) and high input-output isolation voltage.

Product Attributes

Brand: Msksemi
Product Line: MEL357X
Packaging: SOP-4

Technical Specifications

Model	Package	Minimum Packaging	Current Transfer Ratio (CTR) Range (IF=5mA, VCE=5V)	Input-Output Isolation Voltage (Viso)	Collector-Emitter Breakdown Voltage (BVCEO)
MEL357X	SOP-4	3000	50~600%	3750 Vrms	80V

Application Fields

Switching power supplies, smart meters
Industrial control, measuring instruments
Office equipment (e.g., copiers)
Home appliances (e.g., air conditioners, fans, water heaters)

Electrical Characteristics (Ta=25)

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Input	Forward Voltage (VF)	IF=20mA	1.2	1.4	-	V
	Reverse Current (IR)	VR=5V	-	-	10	A
	Terminal Capacitance (Ct)	V=0, f=1kHz	-	30	250	pF
Output	Collector Dark Current (ICEO)	VCE=70V	-	-	100	nA
	Collector-Emitter Breakdown Voltage (BVCEO)	IC=0.1mA, IF=0	80	-	-	V
	Emitter-Collector Breakdown Voltage (BVECO)	IE=0.1mA, IF=0	7	-	-	V
	Collector Power Dissipation (PC)	-	-	-	150	mW
Transfer Characteristics	Current Transfer Ratio (CTR)	IF=5mA, VCE=5V	50	-	400	%
	Collector-Emitter Saturation Voltage (VCE(sat))	IF=20mA, IC=1mA	-	0.1	0.2	V
	Isolation Resistance (RISO)	DC1000V, 40~60%R.H.	1x10¹¹	-	-
	Isolation Capacitance (Cf)	V=0, f=1MHz	-	0.6	1.0	pF
Cut-off Frequency (Fc)	VCE=5V, IC=2mA, RL=100, -3dB	-	80	-	kHz
Switching Time	Rise Time (Tr)	VCE=10V, IC=2mA, RL=100	-	4	18	s
Switching Time	Fall Time (Tf)	-	-	3	18	s

Absolute Maximum Ratings (Ta=25)

Parameter	Symbol	Rating	Unit
Input	Forward Current (IF)	50	mA
	Forward Pulse Current (IFP)	1	A
	Reverse Voltage (VR)	6	V
	Power Dissipation (P)	70	mW
Output	Collector Power Dissipation (PC)	150	mW
	Collector Current (IC)	50	mA
	Collector-Emitter Voltage (VCEO)	80	V
Total Power Dissipation (Ptot)	-	200	mW
Isolation Voltage (Viso)	-	3750 Vrms	-
Operating Temperature (Topr)	-	-55~+110
Storage Temperature (Tstg)	-	-55~+125
Soldering Temperature (Tsol)	-	260

CTR Grading Table

Model	Body Mark	Grading Standard	IC(mA)	CTR (%) Min	CTR (%) Max
MEL357	Blank	IF=5mA, VCE=5V, Ta=25C	2.5	50	600
MEL357A	A	IF=5mA, VCE=5V, Ta=25C	4.0	80	160
MEL357B	B	IF=5mA, VCE=5V, Ta=25C	6.5	130	260
MEL357C	C	IF=5mA, VCE=5V, Ta=25C	10.0	200	400
MEL357D	D	IF=5mA, VCE=5V, Ta=25C	15.0	300	600

Outline Dimensions

Dimensions (mm):

Length: 7.00 0.30	Width: 5.20 0.20	Height: 4.55 -0.15/+0.25
Lead Pitch (TYP): 2.54	Lead Width: 0.40 0.10	Lead Length: 2.1 0.1
Lead Thickness: 0.15

2504101957_MSKSEMI-MEL357B_C41383952.pdf

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