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Phototransistor optocoupler CT MICRO CT817B SL T1 H DC input 4 pin for switch mode power supplies

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Phototransistor optocoupler CT MICRO CT817B SL T1 H DC input 4 pin for switch mode power supplies

Rise time : 9us

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 100mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 35V

Reverse Voltage : 6V

Current transfer ratio : 130%;260%

Forward Current(If) : 60mA

Pd - Power Dissipation : 200mW

Number of Channels : -

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : 50mA 100mV@20mA,1mA 35V 6V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT817B(SL)(T1)-H

Model Number : CT817B(SL)(T1)-H

Package : SOP-4-2.54mm

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Product Overview

The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage (5000 VRMS) and a wide operating temperature range from -55 C to 110 C. Applications include switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

Brand: CT Micro
Product Series: CT817 Series
Type: DC Input 4-Pin Phototransistor Optocoupler
Package Type: 4-lead DIP
Regulatory Approvals: UL (UL1577), VDE (EN60747-5-5), CQC (GB4943.1, GB8898), IEC60065, IEC60950
Material Options: Green (G) or Non-green
Lead Frame Options: Iron (H) or Copper

Technical Specifications

Parameter	Model/Type	Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings
Isolation Voltage (AC, 1 minute)	CT817 Series				5000	VRMS
Total Power Dissipation	CT817 Series				200	mW
Operating Temperature	CT817 Series		-55		110	C
Storage Temperature	CT817 Series		-55		150	C
Soldering Temperature	CT817 Series				260	C
Forward Current (Emitter)	CT817 Series				60	mA
Peak Transient Current (Emitter)	CT817 Series	1s P.W, 300pps			1	A
Reverse Voltage (Emitter)	CT817 Series				6	V
Emitter Power Dissipation	CT817 Series				100	mW
Detector Power Dissipation	CT817 Series				150	mW
Collector-Emitter Breakdown Voltage	CT817 Series		35			V
Emitter-Collector Breakdown Voltage	CT817 Series		6			V
Collector Current (Detector)	CT817 Series				50	mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage	CT817 Series	IF=10mA		1.24	1.4	V
Reverse Current	CT817 Series	VR = 6V			5	A
Input Capacitance	CT817 Series	f=1MHz		10	30	pF
Collector-Emitter Breakdown Voltage	CT817 Series	IC= 100A	35			V
Emitter-Collector Breakdown Voltage	CT817 Series	IE= 100A	6			V
Collector-Emitter Dark Current	CT817 Series	VCE= 20V, IF=0mA			100	nA
Current Transfer Ratio (CTR)	CT817	IF= 5mA, VCE= 5V	50		600	%
Current Transfer Ratio (CTR)	CT817A	IF= 5mA, VCE= 5V	80		160	%
Current Transfer Ratio (CTR)	CT817B	IF= 5mA, VCE= 5V	130		260	%
Current Transfer Ratio (CTR)	CT817C	IF= 5mA, VCE= 5V	200		400	%
Current Transfer Ratio (CTR)	CT817D	IF= 5mA, VCE= 5V	300		600	%
Collector-Emitter Saturation Voltage	CT817 Series	IF= 20mA, IC= 1mA		0.1	0.2	V
Isolation Resistance	CT817 Series	VIO= 500VDC	5x10¹⁰
Isolation Capacitance	CT817 Series	f=1MHz		0.25	1	pF
Switching Characteristics
Rise Time	CT817 Series	IC= 2mA, VCE= 2V, RL= 100		6	18	s
Fall Time	CT817 Series	IC= 2mA, VCE= 2V, RL= 100		8	18	s

2410121452_CT-MICRO-CT817B-SL-T1-H_C191930.pdf

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