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High Isolation DC Input Phototransistor Optocoupler CT MICRO CT817A S T3 for Electronic Circuits

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High Isolation DC Input Phototransistor Optocoupler CT MICRO CT817A S T3 for Electronic Circuits

Rise time : 9us

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 100mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 35V

Reverse Voltage : 6V

Current transfer ratio : 80%;160%

Forward Current(If) : 60mA

Pd - Power Dissipation : 200mW

Number of Channels : -

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : 50mA 100mV@20mA,1mA 35V 6V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT817A(S)(T3)

Model Number : CT817A(S)(T3)

Package : SOP-4-2.54mm

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Product Overview

The CT817 Series is a DC input, 4-pin phototransistor optocoupler designed for high isolation applications. Featuring a gallium arsenide infrared-emitting diode optically coupled to a photo transistor within a DIP package, this series offers high isolation voltage of 5000 VRMS and a wide operating temperature range of -55 C to 110 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options are available to accommodate different mounting requirements.

Product Attributes

Brand: CT Micro
Product Series: CT817 Series
Type: DC Input 4-Pin Phototransistor Optocoupler
Package Type: DIP
Regulatory Approvals: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
Material Option: Green (G) or Non-green
Lead Frame Option: Iron (H) or Copper

Technical Specifications

Parameter	Model/Type	Conditions	Min	Typ	Max	Units
Isolation Voltage (AC, 1 minute)	CT817 Series				5000	VRMS
Total Power Dissipation	CT817 Series				200	mW
Operating Temperature	CT817 Series		-55		110	C
Storage Temperature	CT817 Series		-55		150	C
Soldering Temperature	CT817 Series				260	C
Forward Current (Emitter)	CT817 Series				60	mA
Peak Transient Current (Emitter)	CT817 Series	1s P.W, 300pps			1	A
Reverse Voltage (Emitter)	CT817 Series				6	V
Emitter Power Dissipation	CT817 Series				100	mW
Detector Power Dissipation	CT817 Series				150	mW
Collector-Emitter Breakdown Voltage	CT817 Series		35			V
Emitter-Collector Breakdown Voltage	CT817 Series		6			V
Collector Current (Detector)	CT817 Series				50	mA
Forward Voltage	CT817 Series	IF=10mA		1.24	1.4	V
Reverse Current	CT817 Series	VR = 6V		-	5	A
Input Capacitance	CT817 Series	f=1MHz		10	30	pF
Collector-Emitter Breakdown Voltage	CT817 Series	IC= 100A	35	-	-	V
Emitter-Collector Breakdown Voltage	CT817 Series	IE= 100A	6	-	-	V
Collector-Emitter Dark Current	CT817 Series	VCE= 20V, IF=0mA		-	100	nA
Current Transfer Ratio (CTR)	CT817	IF= 5mA, VCE= 5V	50	-	600	%
Current Transfer Ratio (CTR)	CT817A	IF= 5mA, VCE= 5V	80	-	160	%
Current Transfer Ratio (CTR)	CT817B	IF= 5mA, VCE= 5V	130	-	260	%
Current Transfer Ratio (CTR)	CT817C	IF= 5mA, VCE= 5V	200	-	400	%
Current Transfer Ratio (CTR)	CT817D	IF= 5mA, VCE= 5V	300	-	600	%
Collector-Emitter Saturation Voltage	CT817 Series	IF= 20mA, IC= 1mA		0.1	0.2	V
Isolation Resistance	CT817 Series	VIO= 500VDC	5x10¹⁰	-	-
Isolation Capacitance	CT817 Series	f=1MHz		0.25	1	pF
Rise Time	CT817 Series	IC= 2mA, VCE= 2V, RL= 100		6	18	s
Fall Time	CT817 Series	IC= 2mA, VCE= 2V, RL= 100		8	18	s

2410121452_CT-MICRO-CT817A-S-T3_C191928.pdf

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