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General Purpose Optocoupler CT MICRO CT185GB T1 Featuring Multiple Current Transfer Ratio Selections

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General Purpose Optocoupler CT MICRO CT185GB T1 Featuring Multiple Current Transfer Ratio Selections

Fall time : 9us

Output Current : 50mA

Rise time : 5us@2mA,100Ω

Vce Saturation(VCE(sat)) : 300mV@2.4mA,8mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 6V

Current transfer ratio : 100%;400%

Forward Current(If) : 50mA

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 3.75kV

Description : 50mA 300mV@2.4mA,8mA 80V 6V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT185GB(T1)

Model Number : CT185GB(T1)

Package : SOP-4-2.54mm

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Product Overview

The CT185GB is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, housed in a 4-lead Mini-Flat package. It offers high isolation of 3750 VRMS, a creepage distance of 5mm, and an operating temperature range of -55 C to 110 C. This green package optocoupler is suitable for applications such as DC-DC converters, programmable controllers, and telecommunication equipment, particularly in hybrid substrates requiring high-density mounting. Multiple Current Transfer Ratio (CTR) selections are available.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Mini-Flat
  • Emitting Diode: Gallium Arsenide Infrared-emitting diode
  • Detector: Phototransistor
  • Color: Green Package
  • Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter Ratings Units Notes
Absolute Maximum Ratings (at 25C)
Isolation Voltage (VISO) 3750 VRMS
Operating Temperature (TOPR) -55 ~ +110 C
Storage Temperature (TSTG) -55 ~ +150 C
Soldering Temperature (TSOL) 260 C
Total Power Dissipation (PTOT) 200 mW
Emitter: Forward Current (IF) 50 mA
Emitter: Peak Transient Current (IF(TRANS)) 1 A (1s P.W, 300pps)
Emitter: Reverse Voltage (VR) 6 V
Emitter: Power Dissipation (PD) 70 mW
Detector: Power Dissipation (PC) 150 mW
Detector: Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Detector: Emitter-Collector Breakdown Voltage (BVECO) 7 V
Detector: Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Emitter Characteristics
Forward Voltage (VF) - 1.24 - 1.4 V (IF=10mA)
Reverse Current (IR) - - 5 A (VR=5V)
Input Capacitance (CIN) - 10 - 250 pF (f=1MHz)
Detector Characteristics
Collector-Emitter Breakdown Voltage (BVCEO) 80 - V (IC=500A)
Emitter-Collector Breakdown Voltage (BVECO) 7 - V (IE=100A)
Collector-Emitter Dark Current (ICEO) - 0.01 - 0.08 A (VCE=48V)
Collector-Emitter Dark Current (ICEO) - 2 - 50 A (VCE=48V, TA=85C)
Collector-Emitter Capacitance (CCE) - 10 - pF (f=1MHz)
Transfer Characteristics
Current Transfer Ratio (CTR) 100 - 400 % (IF=5mA, VCE=5V)
Current Transfer Ratio (CTR) 30 - - % (IF=1mA, VCE=0.4V)
Collector-Emitter Saturation Voltage (VCE(SAT)) - - 0.3 V (IF=8mA, IC=2.4mA)
Off-state Collector Current (IC(off)) - 1 - 10 A (VCE=48V, VF=0.7V)
Isolation Characteristics
Isolation Resistance (RIO) 1x1012 - 1014 (VIO=500VDC)
Isolation Capacitance (CIO) - 0.5 - pF (f=1MHz)
Isolation Voltage (VISO) 3750 Vrms AC, 60s
Isolation Voltage (VISO) 10000 - Vrms (AC, 1s in oil)
Isolation Voltage (VISO) 10000 - VDC (DC, 60s in oil)
Switching Characteristics
Rise Time (tr) - 5 - s (VCC=10V, IC=2mA, RL=100)
Fall Time (tf) - 9 - s
Turn-on Time (ton) - 9 - s
Turn-on Time (ton) - 2 - s (VCC=5V, IF=16mA, RL=1.9k)
Storage Time (ts) - 30 - s
Turn-off Time (toff) - 70 - s

2410121512_CT-MICRO-CT185GB-T1_C191836.pdf


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