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phototransistor optocoupler with dc input CT MICRO CT357C T1 featuring 3750 vrms isolation voltage

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phototransistor optocoupler with dc input CT MICRO CT357C T1 featuring 3750 vrms isolation voltage

Rise time : 9us

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 60mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 6V

Current transfer ratio : 200%;400%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 3.75kV

Description : 50mA 60mV@20mA,1mA 80V 6V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT357C(T1)

Model Number : CT357C(T1)

Package : SOP-4-2.54mm

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Product Overview

The CT357 Series is a general-purpose DC input phototransistor optocoupler housed in a 4-pin Mini-Flat package. It features high isolation up to 3750 VRMS and offers multiple Current Transfer Ratio (CTR) selections. Designed for efficient operation, it boasts a creepage distance of 5mm and operates within a wide temperature range of -55 C to +110 C. This series is suitable for applications including DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Mini-Flat
  • Output Type: Phototransistor
  • Input Type: DC
  • Color: Green Package
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter Rating Units Notes
Absolute Maximum Ratings (at 25C)
Isolation Voltage (VISO) 3750 VRMS
Operating Temperature (TOPR) -55 ~ +110 C
Storage Temperature (TSTG) -55 ~ +150 C
Soldering Temperature (TSOL) 260 C
Total Power Dissipation (PTOT) 200 mW
Emitter Characteristics
Forward Current (IF) 50 mA
Peak Transient Current (IF(TRANS)) 1 A 1s P.W, 300pps
Reverse Voltage (VR) 6 V
Power Dissipation (PD) 70 mW
Detector Characteristics
Power Dissipation (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 6 V
Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Emitter Characteristics
Forward Voltage (VF) - 1.24 - 1.4 V IF=10mA
Reverse Current (IR) - - 5 A VR = 6V
Input Capacitance (CIN) - 10 - 250 pF f= 1MHz
Detector Characteristics
Collector-Emitter Breakdown Voltage (BVCEO) 80 - - V IC= 100A
Emitter-Collector Breakdown Voltage (BVECO) 7 - - V IE= 1mA
Collector-Emitter Dark Current (ICEO) - - 100 n A VCE= 20V, IF=0mA
Transfer Characteristics
Current Transfer Ratio (CTR) CT357 50 - 600 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357A 80 - 160 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357B 130 - 260 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357C 200 - 400 % IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357D 300 - 600 % IF= 5mA, VCE= 5V
Collector-Emitter Saturation Voltage (VCE(SAT)) - 0.06 - 0.2 V IF= 20mA, IC= 1mA
Isolation Resistance (RIO) 5x1010 - - VIO= 500VDC
Isolation Capacitance (CIO) - 0.5 - 1 p F f= 1MHz
Switching Characteristics
Rise Time (tr) - 6 - 18 s IC= 2mA, VCE= 2V, RL= 100
Fall Time (tf) - 8 - 18 s IC= 2mA, VCE= 2V, RL= 100

2410121508_CT-MICRO-CT357C-T1_C114918.pdf


Quality phototransistor optocoupler with dc input CT MICRO CT357C T1 featuring 3750 vrms isolation voltage for sale

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