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Mini flat package photocoupler LITEON LTV-1009-TP1-G designed for high density mounting applications

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Mini flat package photocoupler LITEON LTV-1009-TP1-G designed for high density mounting applications

Rise time : 3us@2mA,100Ω

Fall time : 4.7us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 300mV@1mA,10mA

Operating Temperature : -55℃~+100℃

Load Voltage : 70V

Reverse Voltage : 6V

Current transfer ratio : 200%;400%

Forward Current(If) : 60mA

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : Phototransistor Output 5kVrms 1 Channel SOP-4-2.54mm

Mfr. Part # : LTV-1009-TP1-G

Model Number : LTV-1009-TP1-G

Package : SOP-4-2.54mm

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Product Overview

The LTV-10XX-G series are high-performance photocouplers designed for applications requiring high input-output isolation and high collector-emitter voltage. They feature a long mini-flat package, employ double transfer mold technology, and are available in Halogen Free and Pb Free options. These photocouplers are suitable for hybrid substrates requiring high-density mounting and programmable controllers.

Product Attributes

Brand: LITE-ON Technology Corp.
Origin: Taiwan, R.O.C.
Certifications: UL 1577, Cul CA5A, VDE DIN EN60747-5-5 (VDE 0884-5), CQC GB4943.1-2011/ GB8898-2011, Nordic Safety (FIMKO/NEMKO/SEMKO/DEMKO), RoHS Compliance
Material: Halogen Free, Pb Free

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Condition
Absolute Maximum Ratings
Input Forward Current	IF	60	mA	Ta=25C
Reverse Voltage	VR	6	V	Ta=25C
Power Dissipation	P	100	mW	Ta=25C
Junction Temperature	TJ	125	C	Ta=25C
Thermal Resistance Junction to Ambient	RthJ-A	250	C/W	Ta=25C
Thermal Resistance Junction to Case	RthJ-C	180	C/W	Ta=25C
Collector - Emitter Voltage	VCEO	70	V	Ta=25C
Emitter - Collector Voltage	VECO	7	V	Ta=25C
Collector Current	IC	50	mA	Ta=25C
Collector Power Dissipation	PC	150	mW	Ta=25C
Junction Temperature	TJ	125	C	Ta=25C
Total Power Dissipation	Ptot	250	mW	Ta=25C
Isolation Voltage	Viso	5000	Vrms	AC For 1 Minute, R.H. = 40 ~ 60%
Operating Temperature	Topr	-55 ~ +110	C
Storage Temperature	Tstg	-55 ~ +150	C
Soldering Temperature	Tsol	260	C	For 10 Seconds
Electrical Optical Characteristics
Input Forward Voltage	VF		1.25-1.6	V	IF=50mA
Reverse Current	IR		10	A	VR=4V
Terminal Capacitance	Ct		50	pF	V=0, f=1MHz
Output Collector Dark Current	ICEO		10-100	nA	VCE=20V, IF=0mA
Collector-Emitter Breakdown Voltage	BVCEO	70			IC=1mA, IF=0mA
Emitter-Collector Breakdown Voltage	BVECO	7			IE=100A, IF=0mA
Transfer Characteristics
Collector Current	IC	2.5-30	mA	IF=5mA, VCE=5V
Current Transfer Ratio	CTR	50-600	%	IF=5mA, VCE=5V, Ta=25C
Collector-Emitter Saturation Voltage	VCE(sat)		0.3	V	IF=10mA, IC=1mA
Isolation Resistance	Riso	110¹²			DC500V, 40 ~ 60% R.H.
Floating Capacitance	Cf		0.3	pF	V=0, f=1MHz
Response Time (Rise)	tr		3-18	s	VCC=5V, IC=2mA, RL=100
Response Time (Fall)	tf		4.7-18	s	VCC=5V, IC=2mA, RL=100

2410121548_LITEON-LTV-1009-TP1-G_C343877.pdf

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