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General purpose DC input phototransistor optocoupler CT MICRO CT357B T1 with 4 pin mini flat package

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General purpose DC input phototransistor optocoupler CT MICRO CT357B T1 with 4 pin mini flat package

Rise time : 9us

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 60mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 6V

Current transfer ratio : 130%;260%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 3.75kV

Description : 50mA 60mV@20mA,1mA 80V 6V DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT357B(T1)

Model Number : CT357B(T1)

Package : SOP-4-2.54mm

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Product Overview

The CT357 Series is a general-purpose, DC input phototransistor optocoupler featuring a 4-pin Mini-Flat package. It offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 110 C. Available with multiple Current Transfer Ratio (CTR) selections, this optocoupler is suitable for applications such as DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting. The product is manufactured with a green package and holds various regulatory approvals including UL, VDE, CQC, and IEC standards.

Product Attributes

Brand: CT Micro
Series: CT357
Package Type: 4-Pin Mini-Flat
Input Type: DC Input
Output Type: Phototransistor Output
Color: Green Package
Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter	Rating	Units	Notes
Absolute Maximum Ratings (at 25C)
Isolation Voltage (VISO)	3750	VRMS
Operating Temperature (TOPR)	-55 ~ +110	C
Storage Temperature (TSTG)	-55 ~ +150	C
Soldering Temperature (TSOL)	260	C
Total Power Dissipation (PTOT)	200	mW
Emitter Characteristics
Forward Current (IF)	50	mA
Peak Transient Current (IF(TRANS))	1	A	1s P.W, 300pps
Reverse Voltage (VR)	6	V
Power Dissipation (PD)	70	mW
Detector Characteristics
Power Dissipation (PC)	150	mW
Collector-Emitter Breakdown Voltage (BVCEO)	80	V
Emitter-Collector Breakdown Voltage (BVECO)	6	V
Collector Current (IC)	50	mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage (VF)	1.24 (Typ)	V	IF=10mA
Reverse Current (IR)	- (Max) 5	A	VR = 6V
Input Capacitance (CIN)	- (Typ) 30	pF	f=1MHz
Collector-Emitter Breakdown Voltage (BVCEO)	80	V	IC= 100A
Emitter-Collector Breakdown Voltage (BVECO)	7	V	IE= 1mA
Collector-Emitter Dark Current (ICEO)	- (Max) 100	nA	VCE= 20V, IF=0mA
Transfer Characteristics
Current Transfer Ratio (CTR) CT357	50 (Min) - 600 (Max)	%	IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357A	80 (Min) - 160 (Max)	%	IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357B	130 (Min) - 260 (Max)	%	IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357C	200 (Min) - 400 (Max)	%	IF= 5mA, VCE= 5V
Current Transfer Ratio (CTR) CT357D	300 (Min) - 600 (Max)	%	IF= 5mA, VCE= 5V
Collector-Emitter Saturation Voltage (VCE(SAT))	- (Typ) 0.06 - (Max) 0.2	V	IF= 20mA, IC= 1mA
Isolation Resistance (RIO)	5x10¹⁰		VIO= 500VDC
Isolation Capacitance (CIO)	- (Typ) 0.5 - (Max) 1	pF	f=1MHz
Switching Characteristics
Rise Time (tr)	- (Typ) 6	s	IC= 2mA, VCE= 2V, RL= 100
Fall Time (tf)	- (Typ) 8	s	IC= 2mA, VCE= 2V, RL= 100

2410121508_CT-MICRO-CT357B-T1_C127189.pdf

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