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4 Pin DC Input Phototransistor Optocoupler CT MICRO CT817B-H Designed for Computer Peripheral Interfaces

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4 Pin DC Input Phototransistor Optocoupler CT MICRO CT817B-H Designed for Computer Peripheral Interfaces

Rise time : 6us@2mA,100Ω

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 100mV@1mA,20mA

Operating Temperature : -55℃~+110℃

Load Voltage : 35V

Reverse Voltage : 6V

Current transfer ratio : 130%;260%

Forward Current(If) : 60mA

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : 50mA 100mV@1mA,20mA 35V 6V DC DIP-4 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT817B-H

Model Number : CT817B-H

Package : DIP-4

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Product Overview

The CT817 Series is a DC input 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage up to 5000 VRMS and a wide operating temperature range from -55 C to 110 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

Brand: CT Micro
Product Series: CT817 Series
Type: DC Input 4-Pin Phototransistor Optocoupler
Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Package Type: 4-lead DIP
Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
Material Option: Green (G) or Non-green
Lead Frame Option: Iron (H) or Copper

Technical Specifications

Parameter	Rating	Unit	Notes
Absolute Maximum Ratings (at 25C)
Isolation Voltage (VISO)	5000	VRMS
Total Power Dissipation (PTOT)	200	mW
Operating Temperature (TOPR)	-55 ~ +110	C
Storage Temperature (TSTG)	-55 ~ +150	C
Soldering Temperature (TSOL)	260	C
Emitter Characteristics
Forward Current (IF)	60	mA
Peak Transient Current (IF(TRANS))	1	A	(1s P.W, 300pps)
Reverse Voltage (VR)	6	V
Emitter Power Dissipation (PD)	100	mW
Detector Characteristics
Collector-Emitter Breakdown Voltage (BVCEO)	35	V	(IC= 100A)
Emitter-Collector Breakdown Voltage (BVECO)	6	V	(IE= 100A)
Collector Current (IC)	50	mA
Detector Power Dissipation (PD)	150	mW
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage (VF)	- 1.24 1.4	V	(IF=10mA)
Reverse Current (IR)	- - 5	A	(VR = 6V)
Input Capacitance (CIN)	- 10 30	pF	(f=1MHz)
Collector-Emitter Dark Current (ICEO)	- - 100	nA	(VCE= 20V, IF=0mA)
Transfer Characteristics
Current Transfer Ratio (CTR) CT817	50 - 600	%	(IF= 5mA, VCE= 5V)
Current Transfer Ratio (CTR) CT817A	80 - 160	%	(IF= 5mA, VCE= 5V)
Current Transfer Ratio (CTR) CT817B	130 - 260	%	(IF= 5mA, VCE= 5V)
Current Transfer Ratio (CTR) CT817C	200 - 400	%	(IF= 5mA, VCE= 5V)
Current Transfer Ratio (CTR) CT817D	300 - 600	%	(IF= 5mA, VCE= 5V)
Collector-Emitter Saturation Voltage (VCE(SAT))	- 0.1 0.2	V	(IF= 20mA, IC= 1mA)
Isolation Resistance (RIO)	5x10¹⁰		(VIO= 500VDC)
Isolation Capacitance (CIO)	- 0.25 1	pF	(f=1MHz)
Switching Characteristics
Rise Time (tr)	- 6 18	s	(IC= 2mA, VCE= 2V, RL= 100)
Fall Time (tf)	- 8 18	s	(IC= 2mA, VCE= 2V, RL= 100)

2410121452_CT-MICRO-CT817B-H_C127187.pdf

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