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4 Pin Mini Flat Phototransistor Optocoupler CT MICRO CTH214A T1 AC Input Transistor Output Component

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4 Pin Mini Flat Phototransistor Optocoupler CT MICRO CTH214A T1 AC Input Transistor Output Component

Rise time : 9.8us

Fall time : 8us

Output Current : 50mA

Vce Saturation(VCE(sat)) : 40mV@20mA,1mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : -

Current transfer ratio : 50%;150%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : 1

Load Type : Phototransistor

Input type : AC,DC

Isolation Voltage(Vrms) : 3.75kV

Description : 50mA 40mV@20mA,1mA 80V AC,DC SOP-4-1.27mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CTH214A(T1)

Model Number : CTH214A(T1)

Package : SOP-4-1.27mm

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Product Overview

The CTH214 series is an AC input, 4-pin half pitch Mini-Flat DMC-Isolator phototransistor optocoupler. It features high isolation of 3750 VRMS and a patented coplanar structure. Available with various Current Transfer Ratio (CTR) selections, this optocoupler is designed for AC input with transistor output and operates within a temperature range of -55 C to 110 C. It is compliant with RoHS, REACH, and Halogen Free standards, and holds multiple regulatory approvals including UL, VDE, CQC, and IEC62368. The CTH214 series is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

Brand: CT MICRO INTERNATIONAL CORPORATION
Product Line: CTH214 Series
Technology: DMC-Isolator
Certifications: UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC62368
Compliance: RoHS, REACH, Halogen Free
Package Type: 4-Pin Half Pitch Mini-Flat
Input Type: AC Input
Output Type: Transistor Output

Technical Specifications

Symbol	Parameters	Test Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings (TA = 25C, unless otherwise specified)
VISO	Isolation voltage				3750	VRMS
PTOT	Total power dissipation				200	mW
TOPR	Operating temperature		-55		110	C
TSTG	Storage temperature		-55		150	C
TSOL	Soldering temperature				260	C
IF	Forward current				50	mA
IF(TRANS)	Peak transient current (1s P.W,300pps)				1	A
PD (Emitter)	Emitter power dissipation				70	mW
PD (Detector)	Detector power dissipation				150	mW
BVCEO	Collector-Emitter Breakdown Voltage				80	V
BVECO	Emitter-Collector Breakdown Voltage				6	V
IC	Collector Current				50	mA
Electrical Characteristics (TA = 25C, unless otherwise specified)
Emitter Characteristics
VF	Forward voltage	IF=10mA		1.24	1.4	V
CIN	Input Capacitance	f= 1MHz		30		pF
Detector Characteristics
BVCEO	Collector-Emitter Breakdown	IC= 100A	80			V
BVECO	Emitter-Collector Breakdown	IE= 100A	6			V
ICEO	Collector-Emitter Dark Current	VCE= 20V, IF=0mA			100	nA
Transfer Characteristics
CTR	Current Transfer Ratio	CTH214, IF= 1mA, VCE= 5V	20		300	%
CTR	Current Transfer Ratio	CTH214A, IF= 1mA, VCE= 5V	50		150	%
CTR	Current Transfer Ratio	CTH214B, IF= 1mA, VCE= 5V	100		300	%
CTR	Current Transfer Ratio	CTH214, IF= 5mA, VCE= 5V	30		600	%
CTR	Current Transfer Ratio	CTH214A, IF= 5mA, VCE= 5V	80		300	%
CTR Symmetry		IF= 1mA, VCE= 5V	0.7		1.3
VCE(SAT)	Collector-Emitter Saturation Voltage	IF= 20mA, IC= 1mA		0.04	0.2	V
RIO	Isolation Resistance	VIO= 500VDC	5x10¹⁰
CIO	Isolation Capacitance	f= 1MHz		0.5	1	pF
Switching Characteristics
tr	Rise Time	IC= 2mA, VCE= 2V, RL= 100		6		s
tf	Fall Time			8

2410121548_CT-MICRO-CTH214A-T1_C2940729.pdf

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