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DC Input 6 Pin Phototransistor Optocoupler Featuring CT Micro 4N25 with 5000 VRMS Isolation Voltage

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DC Input 6 Pin Phototransistor Optocoupler Featuring CT Micro 4N25 with 5000 VRMS Isolation Voltage

Rise time : 4.3us

Fall time : 3.9us

Output Current : -

Vce Saturation(VCE(sat)) : 500mV@50mA,2mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 6V

Current transfer ratio : -;20%

Forward Current(If) : 60mA

Pd - Power Dissipation : 150mW

Number of Channels : -

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : 500mV@50mA,2mA 80V 6V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : 4N25

Model Number : 4N25

Package : DIP-6

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Product Overview

The CT Micro 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, and H11A5 series are 6-pin phototransistor optocouplers featuring DC input and transistor output. These devices offer high isolation of 5000 VRMS and operate within a temperature range of -55 C to 110 C. They are suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options and tape and reel packaging are available for different mounting and handling requirements.

Product Attributes

Brand: CT Micro
Product Type: DC Input 6-Pin Phototransistor Optocoupler
Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
Material Option: Green (G) or Non-green

Technical Specifications

Model(s)	Parameter	Rating	Units	Notes
All	Isolation Voltage (VISO)	5000	VRMS
	Operating Temperature (TOPR)	-55 ~ +110	C
	Storage Temperature (TSTG)	-55 ~ +150	C
	Soldering Temperature (TSOL)	260	C
	Isolation Resistance (RIO)	1x10¹¹		VIO= 500VDC
	Isolation Capacitance (CIO)	0.25	pF	f= 1MHz
	Emitter Forward Voltage (VF)	1.24 - 1.4	V	IF=10mA
All	Emitter Forward Current (IF)	60	mA
All	Emitter Peak Transient Current	1	A	(1s P.W,300pps)
All	Emitter Reverse Voltage (VR)	6	V
All	Emitter Power Dissipation (PD)	100	mW
All	Detector Power Dissipation (PD)	150	mW
All	Collector-Emitter Breakdown Voltage (BVCEO)	80	V	IC= 0.1mA
All	Collector-Base Breakdown Voltage (BVCBO)	80	V	IC= 0.1mA
All	Emitter-Collector Breakdown Voltage (BVECO)	7	V	IE= 0.1mA
All	Emitter-Base Breakdown Voltage (BVEBO)	7	V
All	Collector-Emitter Dark Current (ICEO)	- - 50	nA	4N25-28, H11A1-5 (VCE= 10V, IF=0mA); 4N35-38 (VCE=60V, IF=0mA)
All	Collector-Base Dark Current (ICBO)	- - 20	nA	VCB= 10V, IF=0mA
4N35	Current Transfer Ratio (CTR)	100	%	IF= 10mA, VCE= 10V
4N25,4N26, 4N38, H11A2, H11A3	Current Transfer Ratio (CTR)	20	%	IF= 10mA, VCE= 10V
4N27, 4N28, H11A4	Current Transfer Ratio (CTR)	10	%	IF= 10mA, VCE= 10V
H11A1	Current Transfer Ratio (CTR)	50	%	IF= 10mA, VCE= 10V
H11A5	Current Transfer Ratio (CTR)	30	%	IF= 10mA, VCE= 10V
4N36	Current Transfer Ratio (CTR)	130 - 260	%	IF= 2mA, VCE= 5V
4N37	Current Transfer Ratio (CTR)	200 - 400	%	IF= 2mA, VCE= 5V
4N25,4N26, 4N27,4N28	Collector-Emitter Saturation Voltage (VCE(SAT))	- - 0.5	V	IF= 50mA, IC= 2mA
4N35,4N36,4N37	Collector-Emitter Saturation Voltage (VCE(SAT))	- - 0.3	V	IF= 10mA, IC= 0.5mA
H11A1,H11A2, H11A3,H11A4,H11A5	Collector-Emitter Saturation Voltage (VCE(SAT))	- - 0.4	V	IF= 10mA, IC= 0.5mA
4N38	Collector-Emitter Saturation Voltage (VCE(SAT))	- - 1.0	V	IF= 20mA, IC= 4mA
4N25,4N26,4N27,4N28, H11A1,A2,A3,A4,A5	Turn On Time (ton)	- 4.3 - 9.8	s	IF= 10mA, VCC= 10V, RL= 100
4N35,4N36,4N37,4N38	Turn On Time (ton)	- 9.8 - 11.5	s	Ic= 2mA, VCC= 10V, RL= 100
4N25,4N26,4N27,4N28, H11A1,A2,A3,A4,A5	Turn Off Time (toff)	- 3.9 - 9.8	s	IF= 10mA, VCC= 10V, RL= 100
4N35,4N36,4N37,4N38	Turn Off Time (toff)	- 6.9 - 11.5	s	Ic= 2mA, VCC= 10V, RL= 100

2410121442_CT-MICRO-4N25_C191858.pdf

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