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Optocoupler RENESAS PS2501-4-A single transistor optically coupled isolator with GaAs LED and phototransistor

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Optocoupler RENESAS PS2501-4-A single transistor optically coupled isolator with GaAs LED and phototransistor

Rise time : 3us

Output Current : 50mA

Fall time : 5us

Vce Saturation(VCE(sat)) : 300mV@10mA,10mA

Operating Temperature : -55℃~+100℃

Load Voltage : 80V

Reverse Voltage : 6V

Load Type : Phototransistor

Current transfer ratio : 80%;600%

Input type : -

Isolation Voltage(Vrms) : 5kV

Number of Channels : 1

Description : 50mA 300mV@10mA,10mA 80V 6V DIP-16 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : PS2501-4-A

Model Number : PS2501-4-A

Package : DIP-16

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Product Overview

The PS2501-1, -4 and PS2501L-1, -4 are high-isolation voltage single transistor type optically coupled isolators. They integrate a GaAs light-emitting diode with an NPN silicon phototransistor. The PS2501-1, -4 are available in a plastic DIP, while the PS2501L-1, -4 feature lead bending for surface mount applications. These devices offer high-speed switching and are suitable for power supplies, telephone/FAX, FA/OA equipment, and programmable logic controllers.

Product Attributes

Brand: Renesas (implied by datasheet format)
Origin: Made in Japan/Taiwan (as per marking example)
Certifications: UL approved (UL1577, Double protection)
Material: GaAs light emitting diode, NPN silicon phototransistor, Plastic DIP
Color: Not specified
Pb-Free product: Yes

Technical Specifications

Parameter	Symbol	Conditions	MIN.	TYP.	MAX.	Unit	PS2501-1, PS2501L-1	PS2501-4, PS2501L-4
Diode Forward Voltage	VF	IF = 10 mA		1.17	1.4	V	✔	✔
Reverse Current	IR	VR = 5 V			5	µA	✔	✔
Terminal Capacitance	Ct	V = 0 V, f = 1.0 MHz			50	pF	✔	✔
Transistor Collector to Emitter Dark Current	ICEO	VCE = 80 V, IF = 0 mA			100	nA	✔	✔
Coupled Current Transfer Ratio (IC/IF)	CTR	IF = 5 mA, VCE = 5 V	80	300	600	%	✔	✔
Collector Saturation Voltage	VCE (sat)	IF = 10 mA, IC = 2 mA			0.3	V	✔	✔
Isolation Resistance	RI-O	VI-O = 1.0 kVDC			10¹¹	Ω	✔	✔
Isolation Capacitance	CI-O	V = 0 V, f = 1.0 MHz			0.5	pF	✔	✔
Rise Time	tr	VCC = 10 V, IC = 2 mA, RL = 100 Ω		3		µs	✔	✔
Fall Time	tf	VCC = 10 V, IC = 2 mA, RL = 100 Ω		5		µs	✔	✔
Diode Reverse Voltage	VR				6	V	✔	✔
Forward Current (DC)	IF				80	mA/ch	✔	✔
Power Dissipation	PD				150	mW/ch	✔
Power Dissipation	PD				120	mW/ch		✔
Peak Forward Current *1	IFP	PW = 100 µs, Duty Cycle = 1 %			1	A/ch	✔	✔
Collector to Emitter Voltage	VCEO				80	V	✔	✔
Emitter to Collector Voltage	VECO				7	V	✔	✔
Collector Current	IC				50	mA/ch	✔	✔
Power Dissipation Derating	ΔPC/°C			1.5		mW/°C	✔
Power Dissipation Derating	ΔPC/°C			1.2		mW/°C		✔
Power Dissipation	PC			150		mW/ch	✔
Power Dissipation	PC			120		mW/ch		✔
Isolation Voltage *2	BV	AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output. Pins 1-2 shorted together, 3-4 shorted together.		5000		Vr.m.s.	✔	✔
Operating Ambient Temperature	TA		-55		+100	°C	✔	✔
Storage Temperature	Tstg		-55		+150	°C	✔	✔

2412232059_RENESAS-PS2501-4-A_C7543857.pdf

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