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High reliability isolated gate driver IC NOVOSENSE NSi6602B-DSWR with programmable deadtime and CMTI

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High reliability isolated gate driver IC NOVOSENSE NSi6602B-DSWR with programmable deadtime and CMTI

Operating Temperature : -40℃~+125℃@(Ta)

Isolation voltage(Vrms) : 5700

Propagation Delay(tpd) : 25ns;25ns

Current - Output High(IOH) : 4A

Rise Time : 7ns

Voltage - Supply : 3V~5.5V;7V~25V

Quiescent Current(Iq) : 750uA

Fall Time : 6ns

CMTI(kV/us) : 100kV/us

Number of Channels : 2

Current - Output Low(IOL) : 6A

Description : 4A 7ns 6ns 6A SOIC-16-300mil Isolators - Gate Drivers RoHS

Mfr. Part # : NSi6602B-DSWR

Model Number : NSi6602B-DSWR

Package : SOIC-16-300mil

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Product Overview

The NSI6602 is a family of high-reliability isolated dual-channel gate driver ICs designed for power transistor driving up to 2MHz switching frequency. Each output can source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching. The NSI6602 offers robust isolation, with 2500Vrms per UL1577 in a 5x5mm LGA13 package, 3000Vrms in a SOIC-16 narrow package, and 5700Vrms in SOIC-16 or SOIC-14 wide packages. It features 150kV/us typical common-mode transient immunity (CMTI) for system robustness. The driver operates with a maximum supply voltage of 28V, while the input side accepts 2.7V to 5V supply voltage. Under-voltage lock-out (UVLO) protection is supported across all power supply voltage pins. These features make the NSI6602 suitable for high-reliability, power density, and efficiency switching power systems.

Key Features

Isolated dual channel driver
Input side supply voltage: 2.7V to 5.5V
Driver side supply voltage: up to 25V with UVLO
4A peak source and 6A peak sink output
High CMTI: 150kV/us typical
25ns typical propagation delay
5ns maximum delay matching
6ns maximum pulse width distortion
Programmable deadtime
Accepts minimum input pulse width 20ns
Operation temperature: -40~125

Product Attributes

Brand: NOVOSENSE
Certifications: UL recognition (LGA13: 2500Vrms, SOP16/SOP14(300mil): 5700Vrms, SOP16(150mil): 3000Vrms per UL1577), DIN VDE V 0884-11:2017-01, CSA component notice 5A, CQC certification per GB4943.1-2011

Applications

Isolated DC-DC and AC-to-DC power supplies in server, telecom, and industry
DC-to-AC solar inverters
Motor drives and EV charging
UPS and battery chargers

Technical Specifications

Parameter	Symbol	Min	Max	Unit	Comments
Absolute Maximum Ratings
Input Side Supply Voltage	VDDI to GNDI	-0.3	6	V
Output Side Supply Voltage	VDDA to GNDA, VDDB to GNDB	-0.3	30	V
Input Signal Voltage	INA, INB, DIS, DT to GNDI	-0.3	VVDDI+0.3	V
Input Signal Voltage (Transient for 50ns)	INA, INB, DIS, DT to GNDI	-5	VVDDI+0.3	V
Output Signal Voltage	OUTA to GNDA, OUTB to GNDB	-0.3	VVDDA+0.3 / VVDDB+0.3	V
Output Signal Voltage (Transient for 200ns)	OUTA to GNDA, OUTB to GNDB	-2	VVDDA+0.3 / VVDDB+0.3	V
Channel A to Channel B Voltage (LGA13)	GNDA to GNDB		700	V
Channel A to Channel B Voltage (SOP16&SOW16)	GNDA to GNDB		1500	V
Channel A to Channel B Voltage (SOW14)	GNDA to GNDB		1850	V
Junction Temperature	TJ	-40	150
Storage Temperature	Tstg	-65	150
Electrostatic Discharge (HBM)		-4000	4000	V	all pins
Electrostatic Discharge (CDM)		-1500	1500	V
Recommended Operating Conditions
Input Side Supply Voltage	VDDI to GNDI	3	5.5	V
Driver Side Supply Voltage	VDDA to GNDA, VDDB to GNDB	7	25	V
Input Signal Voltage	INA, INB, DIS, DT	0	VVDDI	V
Junction Temperature	TJ	-40	150
Ambient Temperature	Ta	-40	125
Thermal Information
Junction-to-ambient thermal resistance	RJA		209.5 (LGA13) / 97.0 (SOW16/SOW14) / 150.5 (SOP16)	/W	1) Standard JESD51-3
Junction-to-case(top) thermal resistance	RJCtop		48.4 (LGA13) / 23.3 (SOW16/SOW14) / 21.2 (SOP16)	/W	2)
Junction-to-top characterization parameter	JT		41.8 (LGA13) / 35.8 (SOW16/SOW14) / 52.3 (SOP16)	/W	3)
Junction-to-board characterization parameter	JB		31.9 (LGA13) / 39.0 (SOW16/SOW14) / 55.6 (SOP16)	/W	3)

2410010403_NOVOSENSE-NSi6602B-DSWR_C2891997.pdf

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