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digital isolator HopeRF Micro-electronics CMT8041N1 with SiO2 insulation and quad channel communication

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digital isolator HopeRF Micro-electronics CMT8041N1 with SiO2 insulation and quad channel communication

CMTI(kV/us) : 200kV/us

Voltage - Supply : 2.5V~5.5V;2.5V~5.5V

Propagation Delay(tpd) : 9ns

Default Output : High Level

Number of Forward Channels : 3

Number of Reverse Channels : 1

Operating Temperature : -40℃~+125℃

Description : Digital Isolator 3750Vrms Forward 3 Channel Reverse 1 Channel 150Mbps 200kV/us CMTI SOIC-16-NB

Mfr. Part # : CMT8041N1

Model Number : CMT8041N1

Package : SOIC-16-NB

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Product Overview

The CMT804X is a high-performance, quad-channel digital isolator utilizing SiO2 insulation, supporting isolation voltages up to 5 kVrms. It facilitates communication between different power domains, preventing noise currents from entering local grounds or interfering with sensitive circuits. The device features an enable pin for high-impedance output in multi-master configurations, reducing power consumption. It offers up to four forward and two backward channels. The CMT804X1 defaults to a high output level upon loss of power or signal, while the CMT804X0 defaults to a low output level. The series boasts enhanced electromagnetic compatibility (EMC) with low radiation and high immunity to ESD, EFT, and surges, achieved through innovative chip design and layout. Available in both SOIC-16 wide and narrow body packages.

Product Attributes

Brand: HOPERF
Certifications: DIN VDE V 0884-11: 2017-01, UL 1577 Component Certification, CSA Certified (IEC 60950-1, IEC 62368-1, IEC 61010-1, IEC 60601-1), CQC Certified (GB4943.1-2022), TUV Certified (EN 60950-1, EN 62368-1, EN 61010-1)
Material: SiO2 insulation
Origin: www.hoperf.cn

Technical Specifications

Parameter	Symbol	Condition	Min	Typical	Max	Unit
Absolute Maximum Ratings
Power Supply Voltage	VDD1, VDD2		-0.5		6	V
Max Input Voltage	INx, EN1, EN2	x = A, B, C, D	-0.4		VDD+0.4	V
Max Output Voltage	OUTx	x = A, B, C, D	-0.4		VDD+0.4	V
Max Input/Output Pulse Voltage		Pulse width < 100 ns, duty cycle < 10%	-0.8		VDD+0.8	V
Transient Common Mode Rejection	CMTI			±200	kV/μs
Output Current	IO		-15		15	mA
Max Surge Immunity				8	kV
Operating Temperature	TA		-40		125	°C
Storage Temperature	TSTG		-40		150	°C
Recommended Operating Conditions
Power Supply Voltage	VDD1, VDD2		2.5	5	5.5	V
High Level Input Voltage	VIH	VDDI: Input side VDD	2		VDDI	V
Low Level Input Voltage	VIL	VDDI: Input side VDD	0		0.8	V
Data Rate	DR		0		150	Mbps
Operating Temperature	TA		-40	25	125	°C
Junction Temperature	TJ		-40		150	°C
ESD Ratings
Electrostatic Discharge	VESD	Human Body Model (HBM)	±8000			V
		Component Charge Mode (CDM)	±2000			V
Key Features
Data Rate					150	Mbps
Wide Supply Voltage Range			2.5		5.5	V
Operating Ambient Temperature Range			-40		125	°C
Robust Isolation Barrier		Expected Lifetime		>40	years
		Isolation Rating		up to 5	kVRMS
		Surge Capability		up to 8	kV
		Typical CMTI		±200	kV/μs
Low Power Consumption		Current per channel at 1 Mbps		1.5	mA
Low Propagation Delay		Typical (powered by 5V)		9	ns
Package Information
Package						SOIC16 (Wide and Narrow Body)
Ordering Information						CMT804X NB(N)SOIC-16 (Narrow), WB(W) SOIC-16 (Wide)

2508011705_HopeRF-Micro-electronics-CMT8041N1_C32713189.pdf

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