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Solid State Relay Component HENGTUO HT-3082 Infrared Emitting Diode with High Isolation Voltage

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Solid State Relay Component HENGTUO HT-3082 Infrared Emitting Diode with High Isolation Voltage

Number of Channels : 1

Power Dissipation : 250mW

Operating Temperature : -40℃~+110℃

Isolation Voltage(Vrms) : 5kV

Static dv/dt : 6V/us

Output Current(It(rms)) : 100mA

Forward Current : 50mA

Load Voltage : 800V

Output Type : -

Voltage - Forward(Vf) : 1.2V

Number of terminals : 6

Zero Crossing Circuit : Yes

Description : 6V/us 100mA 50mA 800V 1.2V DIP-6 Triac, SCR Output Optoisolators RoHS

Mfr. Part # : HT-3082

Model Number : HT-3082

Package : DIP-6

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Product Overview

The HT-304X, HT-306X, and HT-308X series are GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac. Designed for interface logic systems with discrete power triacs, these devices are ideal for solid-state relays, industrial controls, motors, solenoids, and consumer appliances. They offer high input-output isolation voltage and high repetitive peak off-state voltage.

Product Attributes

Brand: Hengtuo Technology Co., LTD.
Certifications: UL 1577, VDE DIN EN60747-5-5, CQC11-471543-2022, RoHS, MSL1

Technical Specifications

Parameter	Symbol	HT-304X	HT-306X	HT-308X	Unit	Condition
Input Forward Current	IF	-	-	-	mA	IF=20mA
Input Forward Voltage	VF	-	1.2	1.4	V	IF=20mA
Reverse Current	VR	-	-	5	A	VR=6V
Output Off-State Output Terminal Voltage	VDRM	400	600	800	V	-
Peak Repetitive Surge Current	ITSM	-	-	1	A	PW=1ms, 120 pps
On-State RMS Current	IT(RMS)	-	-	100	mA	-
Junction Temperature	TJ	-	-	125		-
Operating Temperature	Topr	-40	~	110	C	-
Storage Temperature	Tstg	-55	~	125	C	-
Isolation Voltage	VISO	-	-	5000	Vrms	AC for 1 minute, R.H.= 40 ~ 60% R.H. Pins 1, 2 shorted; Pins 3, 4 shorted.
Couple Led Trigger Current	IFT	-	-	15	mA	Main Terminal Voltage = 3V
Holding Current	IH	-	-	400	uA	-
Zero Crossing Inhibit Voltage	VINH	-	-	20	Volts	IF =Rated IFT , MT1- MT2 Voltage above which device will not trigger.
High critical rate of rise of off-state voltage	dV/dt	6	-	-	V/s	Vin=240Vrms

2411220027_HENGTUO-HT-3082_C34376224.pdf

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